Influence of n-type versus p-type AlGaN electron-blocking layer on InGaN/GaN multiple quantum wells light-emitting diodes
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چکیده
منابع مشابه
Improving hole injection efficiency by manipulating the hole transport mechanism through p-type electron blocking layer engineering.
The p-type AlGaN electron blocking layer (EBL) is widely used in InGaN/GaN light-emitting diodes (LEDs) for electron overflow suppression. However, a typical EBL also reduces the hole injection efficiency, because holes have to climb over the energy barrier generated at the p-AlGaN/p-GaN interface before entering the quantum wells. In this work, to address this problem, we report the enhancemen...
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